Modeling and analysis of high-speed electro-optic modulation in high confinement silicon waveguides using metal-oxide-semiconductor configuration
- 1 December 2004
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 96 (11) , 6008-6015
- https://doi.org/10.1063/1.1814791
Abstract
We analyze the electrical and optical properties of a siliconelectro-opticwaveguidemodulator using a metal-oxide-semiconductor(MOS) configuration. The device performance is studied under different modes of operation of the MOS diode and gate oxide thicknesses. Our calculations indicate that this scheme can be used for achieving high-speed submicron waveguide active devices on silicon on insulator. A microring resonator intensity modulator is predicted to exhibit switching times on the order of tens of picoseconds with modulation depth of 73% by employing a bias voltage of only 5 V.This publication has 21 references indexed in Scilit:
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