The surface barrier volume wave transducer

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Abstract
A theory for generation and detection of acoustic volume waves by a metal-semiconductor contact is presented. Assuming a depletion region of thickness d with constant space charge and permittivity, the signal strength will have a frequency and d dependence given by d3(1/kd)(1-(sin kd)/kd)2. Here k is the wavevector of the acoustic wave. This prediction is qualitatively confirmed experimentally. From observations on KTaO3 the authors find d to be in the interval 20-35 mu m depending on DC bias. By measurements of the rise time of the acoustic signal as a function of temperature, donor levels in KTaO3 were determined to lie 0.52, 0.58 and 0.65 eV below the conduction band.

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