Measurement of mobility-lifetime product in hydrogenated amorphous silicon p-i-n type diodes
- 15 February 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (4) , 405-407
- https://doi.org/10.1063/1.95594
Abstract
We have applied the junction recovery technique to different configurations of hydrogenated amorphous silicon type diodes and show that the recovered charge consists predominantly of holes. The technique is used for the measurement of the mobility-lifetime product for recombination, which was found to be dependent upon the level and type of doping.Keywords
This publication has 9 references indexed in Scilit:
- Photocurrent reversal and charge storage in amorphous silicon: Hydrogen type diodesJournal of Non-Crystalline Solids, 1984
- Storage current in amorphous silicon solar cellsJournal of Non-Crystalline Solids, 1983
- Origin of the photo-induced changes in hydrogenated amorphous siliconSolar Cells, 1983
- Study of the electronic structure of amorphous silicon using reverse-recovery techniquesApplied Physics Letters, 1982
- The lifetime of injected carriers in amorphous silicon p–n junctionsPhilosophical Magazine Part B, 1981
- A physical interpretation of dispersive transport in disordered semiconductorsSolid State Communications, 1981
- Switching processes in alloyed pin rectifiersSolid-State Electronics, 1965
- An experimental determination of the carrier lifetime in p-i-n diodes from the stored carrier chargeSolid-State Electronics, 1964
- Transient Response of a p-n JunctionJournal of Applied Physics, 1954