EVIDENCE FOR DIRECTIONAL COUPLING BETWEEN SEMICONDUCTOR CARRIERS AND SLOW CIRCUIT WAVES

Abstract
An experiment on the interaction between drifting carriers in semiconductors and slow electromagnetic waves in external circuit was performed. Carriers in n‐type InSb were coupled with slow waves through meander‐type and helix‐type circuits at 77°K. Measurements of transmitted microwave power through these systems give clear evidence for directional coupling by this sort of interaction.

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