Possibility of an excitonic ground state in quantum wells
- 15 August 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (4) , 2607-2609
- https://doi.org/10.1103/physrevb.32.2607
Abstract
The possibility of the formation of an excitonic insulator in semiconductors with an indirect gap smaller than the exciton binding energy has been considered in the past. The advent of quantum-well structures makes it feasible to consider indirect gaps in real space that can be conveniently tuned through the semiconductor-semimetal transition. We discuss various quantum-well configurations where a spontaneous condensation of excitons into a collective ground state may be possible.Keywords
This publication has 13 references indexed in Scilit:
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Phonon-Wind-Driven Electron-Hole Plasma in SiPhysical Review Letters, 1984
- Possibility of new effects in quantum wells coupled by Coulomb interactionPhysics Letters A, 1984
- Compositional and doping superlattices in III-V semiconductorsAdvances in Physics, 1983
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- Excitonic “superfluidity” in low-dimensional crystalsSolid State Communications, 1977
- Superconductivity at dielectric pairing of spatially separated quasiparticlesSolid State Communications, 1976
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Excitonic InsulatorPhysical Review B, 1967