Suppression of the Auger recombination due to spin polarization of excess carriers and ions in the semimagnetic semiconductor S
- 15 July 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (4) , R2241-R2244
- https://doi.org/10.1103/physrevb.52.r2241
Abstract
The observation of a strong increase in the photoconductivity of S under an applied magnetic field is reported. The effect, observed at low temperatures, is explained to arise due to the dramatic suppression of the Auger recombination processes involving the excitation of ions transitions within a 3d shell). The single-ion-assisted Auger recombination, which determines the lifetime of the excess carriers at low magnetic fields, become forbidden for the totally spin-polarized single ions, and at high magnetic field the cluster-assisted Auger recombination dominates.
This publication has 3 references indexed in Scilit:
- High-field magnetization steps and the nearest-neighbor exchange constant in S, Te, and SePhysical Review B, 1987
- Determination of the antiferromagnetic exchange constants between nearest-neighbour Mn2+ ions in Cd1-xMnxS and Zn1-xMnxSeSolid State Communications, 1987
- Impact excitation and Auger quenching of luminescent centres in crystals, with special reference to ZnS:MnJournal of Physics C: Solid State Physics, 1986