A comment on the “characterization of swirl defects in floating zone Si crystals” by P.M. Petroff and A.J.R. De Kock
- 1 October 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 35 (3) , 343-344
- https://doi.org/10.1016/0022-0248(76)90201-3
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensationJournal of Crystal Growth, 1975
- Characterization of swirl defects in floating-zone silicon crystalsJournal of Crystal Growth, 1975
- Transmission electron microscope investigation of the growth of copper precipitate colonies in siliconJournal of Applied Physics, 1973
- Precipitation in High-Purity Silicon Single CrystalsJournal of Applied Physics, 1971
- Mechanisms of Dislocation ClimbPhysica Status Solidi (b), 1969
- Precipitation associated with the growth of stacking faults in copper–silver alloysPhilosophical Magazine, 1968
- Gold-Induced Dislocation Loops in Silicon CrystalsJapanese Journal of Applied Physics, 1966
- Partial dislocations associated with NbC precipitation in austenitic stainless steelsPhilosophical Magazine, 1964
- Electron Microscopy of Prismatic Dislocations in SiliconJournal of Applied Physics, 1962
- Gold-Induced Climb of Dislocations in SiliconJournal of Applied Physics, 1960