Artificial epitaxy (graphoepitaxy) of semiconductors
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 65 (1-3) , 339-342
- https://doi.org/10.1016/0022-0248(83)90071-4
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Lateral zone growth and characterization of device quality silicon-on-insulator wafersApplied Physics Letters, 1982
- An Etch Pit Technique for Analyzing Crystallographic Orientation in Si FilmsJournal of the Electrochemical Society, 1982
- Diataxial growth of silicon and germaniumJournal of Crystal Growth, 1981
- Silicon graphoepitaxy using a strip-heater ovenApplied Physics Letters, 1980
- Artificial epitaxy (diataxy) of silicon and germaniumActa Physica Academiae Scientiarum Hungaricae, 1979
- Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallizationApplied Physics Letters, 1979
- Surface relief gratings of 3200-Å-period fabrication techniques and influence on thin-film growthJournal of Vacuum Science and Technology, 1978
- Oriented crystal growth on amorphous substrates using artificial surface-relief gratingsApplied Physics Letters, 1978
- Single-crystal films of silicon on insulatorsBritish Journal of Applied Physics, 1967
- Photoconductivity and Crystal Size in Evaporated Layers of Cadmium SulphideNature, 1958