Laser operation of heteroepitaxial InxGa1−xAs by molecular beam epitaxy
- 2 July 1979
- journal article
- Published by Elsevier in Surface Science
- Vol. 86, 137-143
- https://doi.org/10.1016/0039-6028(79)90388-1
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Low-Loss single-mode fibre at the material-dispersion-free wavelength of 1.27 μmElectronics Letters, 1977
- Effect of dopants on transmission loss of low-OH-content optical fibresElectronics Letters, 1976
- Graded-Bandgap III-V Ternary Compound Films by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1976
- Room‐temperature operation and threshold temperature dependence of LPE‐grown InxGa1−xAs homojunction lasersJournal of Applied Physics, 1975
- Zero material dispersion in optical fibresElectronics Letters, 1975
- Growth and characterization of liquid−phase epitaxial InxGa1−xAsJournal of Applied Physics, 1975
- A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrateApplied Physics Letters, 1975
- Metallurgical amd electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of InxGa1−xAsJournal of Electronic Materials, 1975
- cw laser diodes and high-power arrays of InxGa1−xAs for 1.06-μm emissionApplied Physics Letters, 1974
- Room-temperature laser operation of InxGa1−xAs p-n junctionsApplied Physics Letters, 1974