A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrate
- 1 February 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (3) , 108-110
- https://doi.org/10.1063/1.88082
Abstract
A small amount of P has been added to a Ga−In−As melt for liquid phase epitaxial growth of GaxIn1−xAs on GaAs substrate. By this technique, GaxIn1−xAs layers of low etch−pit density and wide composition range have been grown on GaxIn1−xAsyP1−y continuously graded composition layers.Keywords
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