Photoemission and RHEED Studies of Bonding Properties at the CaF2/GaAs(001) Interface
- 1 February 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (2A) , L299
- https://doi.org/10.1143/jjap.28.l299
Abstract
Surface-sensitive analysis with synchrotron radiation photoemission spectroscopy is performed to determine the bonding properties of MBE-grown CaF2 films on GaAs(001) substrates for different substrate temperatures. Ca atoms in the unoxidized state and in the 1+ oxidation state exist at the interface at high (about 580°C) substrate temperature as a result of CaF2 dissociation reaction; the RHEED pattern which appears only in the high temperature condition, is related to Ca atoms in both the unoxidized state and the 1+ oxidation state. At low (about 420°C) substrate temperature, CaF2 does not dissociate.Keywords
This publication has 4 references indexed in Scilit:
- A GaAsMISFET using an MBE-grown CaF/sub 2/ gate insulator layerIEEE Electron Device Letters, 1988
- Determination of Ca-As bonding at the CaF2/GaAs interfaceApplied Surface Science, 1988
- Photoemission from mbe grown III–V surfaces and interfacesSurface Science, 1983
- MBE-grown fluoride films: A new class of epitaxial dielectricsJournal of Vacuum Science and Technology, 1981