Electrical and Photoelectrical Characterization of n·GaxAl1-xSb–p·GaSb Heterojunction
- 1 July 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (7R)
- https://doi.org/10.1143/jjap.21.1053
Abstract
A heterojunction of n·Ga x Al1-x Sb–p·GaSb was prepared by vapor-phase deposition in a conventional closed-tube system with iodine as a transport agent. Electrical and photoelectrical characterization was carried out on the heterojunction diodes. The I-V characteristics showed that η in the forward current varied between 1 and 2 in the experimental range 206–300 K. The C-V measurements indicated that the heterojunction was an abrupt one with a diffusion potential of 0.65 V. The spectral photovoltaic response gave a broad peak between 1.35 and 1.55 µm.Keywords
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