Peculiarities in the Modeling of High Dose Implantation of Nitrogen on Silicon Targets
- 16 November 1990
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 122 (1) , K19-K24
- https://doi.org/10.1002/pssa.2211220146
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Modeling of Nitrogen High Dose Implantation into Silicon in the Energy Range of 150 to 330 keVPhysica Status Solidi (a), 1989
- Nitrogen profile modification in high dose implantation synthesis of silicon nitridePhysica Status Solidi (a), 1988
- A model for the oxidation of silicon by high dose oxygen implantationThin Solid Films, 1985
- Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO2 and Si3N4 Layers Fabricated by Oxygen and Nitrogen Implantation in SiliconJapanese Journal of Applied Physics, 1982