Electric field dependence of the Raman phonon in the charge-density-wave state of TaS3
- 15 August 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (4) , 2711-2713
- https://doi.org/10.1103/physrevb.32.2711
Abstract
The effect of the electric field on one of the Raman phonons (∼285 ) is studied in the chargedensity-wave state of orthorhombic Ta. The phonon frequency decreases when the field exceeds the threshold for non-Ohmic conduction. Several mechanisms which may lead to phonon softening in the current-carrying state are considered.
Keywords
This publication has 13 references indexed in Scilit:
- X-ray diffraction study of the CDW phase in (TaSe4)2I: Determination of the CDW modulation amplitudeSolid State Communications, 1985
- Electric Field Dependence of Elastic Properties of TaPhysical Review Letters, 1984
- Thermoelectric Aspects of Charge-Density-Wave Transport in TaPhysical Review Letters, 1984
- Effect of the charge-density-wave gap on the Raman spectra in orthorhombic TaPhysical Review B, 1984
- Charge-density-wave transport in orthorhombic Ta. I. Nonlinear conductivityPhysical Review B, 1982
- Theory of Non-Ohmic Conduction from Charge-Density Waves in NbPhysical Review Letters, 1979
- Raman Spectroscopy of the Charge-Density-Wave State in TaPhysical Review Letters, 1978
- Peierls transition in TaS3Solid State Communications, 1977
- Changes of infrared and Raman spectra induced by structural phase transitions. I. General considerationsJournal of Physics C: Solid State Physics, 1976
- Conductivity from charge or spin density wavesSolid State Communications, 1974