pMOSFET with 200% mobility enhancement induced by multiple stressors
- 30 May 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (6) , 511-513
- https://doi.org/10.1109/led.2006.875766
Abstract
Recessed Si/sub 0.8/Ge/sub 0.2/ source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhancement to the authors' knowledge. This letter demonstrates that a drive-current improvement from recessed Si/sub 0.8/Ge/sub 0.2/ plus the compressive nitride layer are in fact additive. Furthermore, it shows that the mobility enhancement is a superlinear function of stress, leading to larger than additive gains in the drive current when combining several stress sources.Keywords
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