Improvement of radiation hardness in poly-Si gateMOS capacitor by use of amorphous-Si
- 1 September 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (18) , 1540-1542
- https://doi.org/10.1049/el:19941035
Abstract
A poly-Si gate electrode formed by amorphous-Si film is proposed and demonstrated to improve the radiation hardness in MOS capacitors. The improvement of radiation hardness is due to the increase of compressive stress in the oxide. As little change in the device fabrication process is required, it should be useful in practice.Keywords
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