Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes
- 1 May 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (5B) , L600
- https://doi.org/10.1143/jjap.31.l600
Abstract
The electrical characteristics of metal-reoxidized nitrided oxide (RNO)-semiconductor devices which employ furnace oxide (OF) and rapid thermal oxide (OR) as starting oxides are investigated. It is found that the RNO structure which uses OF as a starting oxide and with nitridation carried out at a sufficiently high temperature, exhibits the lowest initial interface traps in comparison with other RNO structures. Metal-oxide-semiconductor (MOS) devices which use pure OR as a gate oxide are worthy of note due to their good hot-electron and radiation hardnesses. The gate-area dependence of radiation hardness for various structures is also discussed.Keywords
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