P‐9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In‐Ga‐Zn‐Oxide TFT
- 1 June 2009
- journal article
- Published by Wiley in SID Symposium Digest of Technical Papers
- Vol. 40 (1) , 1110-1112
- https://doi.org/10.1889/1.3256479
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Defect energetics in ZnO: A hybrid Hartree-Fock density functional studyPhysical Review B, 2008
- 42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED DisplaySID Symposium Digest of Technical Papers, 2008
- 42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTsSID Symposium Digest of Technical Papers, 2008
- P‐29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of StatesSID Symposium Digest of Technical Papers, 2008
- Oxygen vacancies in ZnOApplied Physics Letters, 2005
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- Hydrogen as a Cause of Doping in Zinc OxidePhysical Review Letters, 2000