Double‐mesa reach‐through avalanche photodiodes with a large gain‐bandwidth product made from thin silicon films
- 1 October 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (10) , 5324-5331
- https://doi.org/10.1063/1.324435
Abstract
A new geometry for an avalanche photodiode is presented which allows both a large gain‐bandwidth product (300 GHz) at high frequencies and a high quantum efficiency in the 0.4–1‐μm wavelength range. It is a thin‐silicon‐film double‐mesa‐shaped structure, which utilizes light reflection at the back metallic contact. The advantages of such a structure are discussed, and the fabrication steps and typical electrical and optical data of these diodes are presented.This publication has 6 references indexed in Scilit:
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