Two-stage hot-carrier degradation and its impact on submicron LDD NMOSFET lifetime prediction

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Abstract
The device degradation of oxide-spacer LDD NMOS transistors due to hot carriers is studied in detail. It is found that the observed saturation in the degradation time dependence is due to a combination of an increase in the series resistance in the lightly-doped drain region, and a reduction of the carrier mobility in the channel and subdiffusion regions. Because the increase in series resistance eventually saturates, an asymptotic degradation rate coefficient can be used to extract a more accurate and consistent value of LDD NMOS lifetime.> Author(s) Vei-Han Chan Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA Chung, J.E.