1/f noise in (100) n-channel Si-MOSFETs from T = 4.2 K to T = 295 K
- 30 June 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (6) , 1105-1111
- https://doi.org/10.1016/0038-1101(88)90413-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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