Interface states at the SiO2-Si interface

This publication has 111 references indexed in Scilit:

• A study of oxide traps and interface states of the silicon-silicon dioxide interface
  Journal of Applied Physics, 1980
• Characterization of surface states in HCl-grown oxides using MOS transient currents
  Solid-State Electronics, 1980
• Influence of interface charge inhomogeneities on the measurement of surface state densities in SiSiO2 interfaces by means of the MOS a.c. conductance technique
  Solid-State Electronics, 1977
• Evolution of surface-states density of Si/wet thermal SiO2 interface during bias-temperature treatment
  Solid-State Electronics, 1977
• Determination of interface and bulk-trap states of IGFET’s using deep-level transient spectroscopy
  Journal of Applied Physics, 1976
• Wetting of thin layers of SiO2 by water
  Applied Physics Letters, 1974
• Electrical characteristics of the SiO2Si interface near midgap and in weak inversion
  Solid-State Electronics, 1974
• Electronic properties of the Si-SiO2 interface as a function of oxide growth conditions. II. Fixed charge
  Physica Status Solidi (a), 1972
• A quasi-static technique for MOS C-V and surface state measurements
  Solid-State Electronics, 1970
• CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCE
  Applied Physics Letters, 1967