Stark shift in electroluminescence of individual InAs quantum dots

20 June 2000

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 76 (26) , 3932-3934
https://doi.org/10.1063/1.126825

Abstract

We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow peaks due to emission from individual dots. From the shift of the peaks in an electric field (the quantum confined Stark effect), we show that the ground and excited states in the dots have different spatial alignments of the electron and hole.

Keywords

This publication has 9 references indexed in Scilit:

Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
Physical Review Letters, 2000
Landau-Level Spectroscopy of a Two-Dimensional Electron System by Tunneling through a Quantum Dot
Physical Review Letters, 2000
Excited-state optical transitions of excitons and biexcitons in a single ${In}_{x} {Ga}_{1 - x} As$ quantum disk
Physical Review B, 1998
Spatially resolved magneto-optics on confined systems
Physica B: Condensed Matter, 1998
Polarized photoluminescence spectroscopy of single self-assembled InAs quantum dots
Physical Review B, 1998
Zeeman splitting of excitons and biexcitons in single ${In}_{0.60} {Ga}_{0.40} A s / G a A s$ self-assembled quantum dots
Physical Review B, 1998
Multiexciton Spectroscopy of a Single Self-Assembled Quantum Dot
Physical Review Letters, 1998
Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots
Applied Physics Letters, 1998
High efficiency submicron light-emitting resonant tunneling diodes
Applied Physics Letters, 1994