Doping superlattices based on InSb for mid-infrared detector applications
- 8 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (2) , 151-153
- https://doi.org/10.1063/1.103060
Abstract
The suitability of doping (‘‘nipi’’) superlattices based on InSb for 10 μm detector applications is studied and 77 K D* values of 8.1×1010 cm√Hz/W are found in optimized structures. The mode of nipi operation results in ‘‘self-passivating’’ devices which are compatible with III-V processing technology, and sensitivity uniformity figures superior to CdHgTe devices for large-area integrated detector arrays are predicted.Keywords
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