Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1S)
- https://doi.org/10.1143/jjap.33.375
Abstract
The initial stages of the thermal (600° C) oxide growth of Si (001) clean surfaces were studied by scanning tunneling microscopy (STM). Oxide growth starts from both step edges and terraces. At 120L, almost the entire surface was covered by oxides. Steps could still be identified, and the apparent roughness had a local minimum at this O2 exposure. These results indicate that the first layer is oxidized quite uniformly. Some local orderings of the initial oxides were observed on the terraces, which may enhance the oxide growth in the lateral (parallel to the surface) direction.Keywords
This publication has 14 references indexed in Scilit:
- The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling MicroscopyJapanese Journal of Applied Physics, 1993
- Dynamic observations of interface propagation during silicon oxidationPhysical Review Letters, 1992
- The non-steady-state bulk generation effect on the C-t transients in an MIS device under linear voltage sweepSolid-State Electronics, 1991
- Photoemission proof for aisland growth mode initiated on the steps of Si(001) during thermal oxidation byPhysical Review B, 1989
- Substrate temperature dependence of the initial growth mode ofon Si(100)-(2×1) exposed to: A photoemission studyPhysical Review B, 1989
- High-Resolution Electron Microscopy and Scanning Tunneling Microscopy of Native Oxides on SiliconScience, 1987
- The Evolution of Si / SiO2 Interface RoughnessJournal of the Electrochemical Society, 1987
- The Structure of the (001)Si/SiO2 InterfaceMRS Proceedings, 1987
- Initial stage of thermal oxidation of the Si(111)-(7×7) surfacePhysical Review B, 1986
- On the role of scattering by surface roughness in silicon inversion layersSurface Science, 1973