The non-steady-state bulk generation effect on the C-t transients in an MIS device under linear voltage sweep
- 31 January 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (1) , 43-46
- https://doi.org/10.1016/0038-1101(91)90198-8
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Graphical technique to determine minority carrier lifetime and surface generation velocity using triangular-voltage sweep C-V methodSolid-State Electronics, 1978
- Determination of generation lifetime from non-equilibrium linear-sweep current and capacitance measurements on an MOS capacitorSolid-State Electronics, 1978
- Non-steady-state bulk-generation processes in pulsed metal-insulator-semiconductor capacitorsSolid-State Electronics, 1976
- A modified linear sweep technique for MOS-C generation rate measurementsIEEE Transactions on Electron Devices, 1975
- A linear-sweep MOS-C technique for determining minority carrier lifetimesIEEE Transactions on Electron Devices, 1972
- Interpretation of surface and bulk effects using the pulsed MIS capacitorSolid-State Electronics, 1971
- On the determination of surface recombination velocity from the transient response of MIS structuresSolid-State Electronics, 1970
- On the separation of bulk and surface components of lifetime using the pulsed MOS capacitorSolid-State Electronics, 1970
- Different mechanisms affecting the inversion layer transient responseIEEE Transactions on Electron Devices, 1968
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967