Graphical technique to determine minority carrier lifetime and surface generation velocity using triangular-voltage sweep C-V method
- 31 August 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (8) , 1057-1061
- https://doi.org/10.1016/0038-1101(78)90185-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Investigation of the generation characteristics of metal-insulator-semiconductor structuresSolid-State Electronics, 1975
- Der Einfluß der inhomogenen Verteilung der Rekombinationszentren auf das Inversionsverhalten von MOS-KondensatorenPhysica Status Solidi (a), 1974
- On the Determination of Minority Carrier Lifetime and Surface Recombination Velocity from the Transient Response of MOS CapacitorsJapanese Journal of Applied Physics, 1972
- A linear-sweep MOS-C technique for determining minority carrier lifetimesIEEE Transactions on Electron Devices, 1972
- Interpretation of surface and bulk effects using the pulsed MIS capacitorSolid-State Electronics, 1971