A linear-sweep MOS-C technique for determining minority carrier lifetimes

Abstract
A nonpulse MOS-C τ0measurement procedure, based upon the capacitance-voltage characteristics derived in response to a linear voltage sweep initiated and maintained under inversion biases, is described, analyzed, and illustrated. The most significant advantages of the procedure are interpretational and instrumentational simplicity. For typical dopings and oxide thicknesses, the conveniently measured lifetime range covers 0.1 µs ≲ τ0≲ 10 µs. About a decade improvement in the limits on the conveniently measured lifetime range can be achieved by employing relatively thin (0.1 µ) or relatively thick (1 µ) oxides.