Determination of generation lifetime from non-equilibrium linear-sweep current and capacitance measurements on an MOS capacitor
- 1 March 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (3) , 549-553
- https://doi.org/10.1016/0038-1101(78)90025-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Field-enhanced carrier generation in MOS capacitorsSolid-State Electronics, 1974
- A linear-sweep MOS-C technique for determining minority carrier lifetimesIEEE Transactions on Electron Devices, 1972
- Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface statesPhysica Status Solidi (a), 1972
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952