Influence of clustering on the mobility of III-V semiconductor alloys
- 15 September 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (6) , 1866-1868
- https://doi.org/10.1063/1.334200
Abstract
Using published structural data we estimate that the conduction band in GaInAsP alloys matched to InP has a spatial variation with an amplitude of about 0.08 eV as a result of partial segregation into clusters. We argue that the electrons may be located in isolated ‘‘lakes’’ and that since the conduction band fluctuation is larger than kT at room temperature and below, current conduction may be inhomogeneous and may be restricted to percolation paths. This could account for reported differences in mobility of alloys grown within and outside the miscibility gap.This publication has 14 references indexed in Scilit:
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