Quantum well intermixing with high spatial selectivityusing a pulsed lasertechnique
- 20 July 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (15) , 1285-1286
- https://doi.org/10.1049/el:19950868
Abstract
The authors demonstrate a new quantum well intermixing technique which allows bandgap shifts of typically 100 meV to be realised with a high spatial resolution in a GaInAs/GaInAsP MQW waveguide structure. The material was irradiated with pulses from a Q-switched Nd:YAG laser, and was then subjected to rapid thermal annealing at 700°C for several minutes. The spatial resolution of the disordering process was investigated across a masked interface, and was determined to be ≤25 µm.Keywords
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