Electroluminescent Devices with (Y2O2S:Tb/ZnS)n Multilayered Phosphor Thin Films Prepared by Multisource Deposition
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9B) , L1366
- https://doi.org/10.1143/jjap.31.l1366
Abstract
An (Y2O2S:Tb/ZnS) n multilayered thin-film electroluminescence (TFEL) device has been fabricated by the multisource deposition method. The multilayered TFEL device has shown a maximum luminance of 124 cd/m2 at 5 kHz. It is also seen that the EL characteristics strongly depend on the structure of phosphor layers, and the TFEL device with the Y2O2S:Tb single layer showed nominal EL emission. The excitation mechanism of the (Y2O2S:Tb/ZnS) n multilayered TFEL devices is discussed.Keywords
This publication has 5 references indexed in Scilit:
- TbOF complex centers in ZnS thin-film electroluminescent devicesApplied Physics Letters, 1988
- High-brightness green-emitting electroluminescent devices with ZnS:Tb,F active layersApplied Physics Letters, 1986
- New type of thin-film electroluminescent device having a multilayer structureApplied Physics Letters, 1982
- Bright green electroluminescence in thin-film ZnS : TbF3Applied Physics Letters, 1979
- ELECTROLUMINESCENCE OF RARE-EARTH AND TRANSITION METAL MOLECULES IN II-VI COMPOUNDS VIA IMPACT EXCITATIONApplied Physics Letters, 1968