Poly-Silicon Thin-Film Transistors with Uniform Performance Fabricated by Excimer Laser Annealing

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Abstract
Uniform performance in poly-Si thin-film transistors (TFTs) has been successfully achieved by excimer laser annealing. Mobility and its uniformity over a substrate were 59±3 cm2/V·s for n-channel TFTs and 45±5 cm2/V·s for p-channel types. To achieve uniform performance, we combined step annealing that uses two energy levels, and small-pitch annealing that moves a beam forward by a small pitch. The proposed method can improve surface morphology and uniformity of grain size in poly-Si. A 400-stage CMOS shift register composed of these TFTs could operate at 5 V, and attained the speed of 1 MHz at 8 V.

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