Sulfur in silicon
- 1 January 1959
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 8, 81-83
- https://doi.org/10.1016/0022-3697(59)90279-3
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Deep level impurities in germaniumJournal of Physics and Chemistry of Solids, 1959
- Interactions between Oxygen and Acceptor Elements in SiliconJournal of Applied Physics, 1958
- Properties of Silicon Doped with Iron or CopperPhysical Review B, 1957
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957
- Oxygen as a Donor Element in GermaniumNature, 1957
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957
- Variation of the distribution coefficient and solid solubility with temperatureJournal of Physics and Chemistry of Solids, 1957
- Solubility and Diffusivity of Gold, Iron, and Copper in SiliconJournal of Applied Physics, 1956
- Optical Properties of Indium-Doped SiliconPhysical Review B, 1955