Effects of device design on the thermal properties of InP-based HBTs

Publisher Website

24 January 2004

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iscs.2003.1239977

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Thermal resistance characterization of 200 GHz F/sub t/ InGaAs/InAlAs HBTs
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
Effects of device design on InP-based HBT thermal resistance
IEEE Transactions on Device and Materials Reliability, 2001