Depletion Layer Properties in Double Diffused Transistors†

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Abstract
For the double diffused transistor, Poisson's equation is solved in one dimension; this solution is used to determine depletion layer properties of its collector and emitter junctions. Assuming an impurity atom distribution characterized by the summation of complementary error functions, depletion layer widths are established far the equilibrium emitter junction and for the reverse biased collector junction. Applications of this analysis are presented throughout a wide range of physical and geometrical parameters; graphical illustrations are given for the electrical base width, the collector ‘ punch-through ’ voltage, and others.

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