Cadmium Selenide: A Promising Novel Room Temperature Radiation Detector
- 1 February 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (1) , 368-370
- https://doi.org/10.1109/tns.1983.4332290
Abstract
Large single crystals of CdSe weighing about 30g were grown by the vertical unseeded vapor growth technique at a linear growth rate of 5mm/day and a temperature gradient of 10°C/cm. Crystal perfection and homogeneity were evaluated by Laue X-ray diffraction, etch pit density, SEM and microprobe analysis methods. The dark resistivity of the as-grown and the heat treated crystal was about 1Ωcm and 1012Ωcm respectively. Slices were used to fabricate room temperature detectors for nuclear radiation energy. The detectors showed high efficiency and stability as a function of time for radiation sources from 1OKeV to 66OKeV.Keywords
This publication has 16 references indexed in Scilit:
- Vertical unseeded vapor growth of large α-GeTe crystalsJournal of Crystal Growth, 1981
- Performance Comparison of Standard CdTe and Hgl2 DetectorsIEEE Transactions on Nuclear Science, 1980
- Cadmium telluride and mercuric iodide gamma radiation detectorsNuclear Instruments and Methods, 1979
- Polarization in Cadmium Telluride Nuclear Radiation DetectorsIEEE Transactions on Nuclear Science, 1976
- Properties of CdSe Single Crystals Grown by the Piper-Polich MethodJapanese Journal of Applied Physics, 1975
- Hole and electron drift velocity in CdSe at room temperatureSolid State Communications, 1972
- Effect of Thermal Treatment in Cd or Se Atmosphere on Electrical Properties of CdSeJapanese Journal of Applied Physics, 1969
- Diffusion of the Chalcogens in the II-VI CompoundsPhysical Review B, 1967
- Electrical Properties of n‐Type CdSePhysica Status Solidi (b), 1967
- Electrical Properties of Cadmium Selenide Single Crystals –Effect of Heat-Treatment in Selenium Vapor–Japanese Journal of Applied Physics, 1965