Diffusion of the Chalcogens in the II-VI Compounds

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Abstract
It has been found that the diffusion coefficients of Se and Te in a variety of Zn and Cd chalcogenides can be varied up to a factor of 1000 by varying the component partial pressures over the compounds. Over most of the solidus region this variation is consistent with an inverse relationship between the diffusion coefficient and the Zn or Cd partial pressures. This simple relation implies neutral interstitial chalcogens as the diffusing defect. Under extreme metal-pressure conditions, a second diffusion process, probably involving chalcogen vacancies, dominates. It is concluded that the II-VI compounds show considerably more high-temperature disorder than previously thought.

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