Recombination within Disordered Regions: Influence of Barrier Height on Recombination Rate and Injection Level Effects
- 1 January 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 20 (6) , 196-203
- https://doi.org/10.1109/TNS.1973.4327393
Abstract
Disordered regions are highly effective for recombination in neutron-irradiated silicon and germanium. Extension of an earlier analysis is presented which takes into account the effect of recombination on the local carrier concentration, and qualitatively explains various experimental observations, particularly the variation of lifetime with excess density. Comparisons to Gregory's impact model are made, and arguments are presented which favor the present analysis. It is observed that the previous conclusion that impurities are unimportant for recombination in neutron-irradiated material may not be valid for practical situations which involve high excess carrier densities.Keywords
This publication has 19 references indexed in Scilit:
- Short-Term Annealing in Silicon Devices Following Pulsed 14-MeV Neutron IrradiationIEEE Transactions on Nuclear Science, 1972
- Recombination studies on gamma-irradiated n-type siliconJournal of Applied Physics, 1972
- Minority Carrier Recombination in Neutron Irradiated SiliconIEEE Transactions on Nuclear Science, 1969
- Statistics of Carrier Recombination at Disordered Regions in SemiconductorsJournal of Applied Physics, 1968
- Injection-Level Studies in Neutron-Irradiated SiliconIEEE Transactions on Nuclear Science, 1967
- Effects of Oxygen and Dopant on Lifetime in Neutron-Irradiated SiliconIEEE Transactions on Nuclear Science, 1966
- DIRECT OBSERVATION OF NEUTRON DAMAGE IN GERMANIUMApplied Physics Letters, 1962
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952