Influence of electron velocity overshoot on collector transit times of HBTs

This publication has 6 references indexed in Scilit:

• Subpicosecond InP/InGaAs heterostructure bipolar transistors
  IEEE Electron Device Letters, 1989
• Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector region
  IEEE Electron Device Letters, 1988
• A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure
  IEEE Transactions on Electron Devices, 1988
• AlGaAs/GaAs heterojunction bipolar transistors with small size fabricated by a multiple self-alignment process using one mask
  IEEE Transactions on Electron Devices, 1987
• Electron velocity overshoot in the collector depletion layer of AlGaAs/GaAs HBT's
  IEEE Electron Device Letters, 1986
• A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistors
  IEEE Electron Device Letters, 1986