p-type doping of CdTe with a nitrogen plasma source
- 1 March 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (5) , 2343-2346
- https://doi.org/10.1063/1.361160
Abstract
We report here on the growth and the characterization of p‐type CdTe grown by molecular beam epitaxy on (001) Cd0.96Zn0.04Te substrates. Nitrogen has been used as a dopant, which is activated in an electron cyclotron resonance plasma source. The carrier concentration was determined using a C/V profiler. Nitrogen has been successfully incorporated substitutionally and hole densities up to 2.6×1017 cm−3 have been achieved. In addition we present data from x‐ray diffraction and photoluminescence, which demonstrate the effect of self‐compensation on the nitrogen‐doped CdTe layers.This publication has 15 references indexed in Scilit:
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