Electron capture cross-section in copper doped CdS
- 17 September 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 35 (9) , 727-728
- https://doi.org/10.1016/0038-1098(80)90883-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Electric and optical properties of the ’’Cu-red’’ center in ZnSeJournal of Applied Physics, 1979
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978
- Deep Level Impurities in SemiconductorsAnnual Review of Materials Science, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974
- Photocapacitance Studies of the Oxygen Donor in GaP. II. Capture Cross SectionsPhysical Review B, 1973
- Mechanism of the Green-Copper Luminescence in ZnS Crystals. I. Direct Evidence for the Pair Emission MechanismJournal of the Physics Society Japan, 1971
- Magneto-Optical Studies of Excited States of the Cl Donor in CdSPhysical Review B, 1970
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- Recombination MechanismsPhysica Status Solidi (b), 1968