To Probe the Absorption Edge of Porous Silicon by Erbium
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Intra-4f-transitions from erbium atoms are proposed as a probe to determine absorption edges of the hosts. This idea was firstly applied on erbium-doped porous silicon materials. Intense and sharp 1.54 μm luminescence from erbium triply ionized ions as well as visible emissions from porous silicon were observed up to room temperature. Photoluminescence excitation spectroscopy investigations of the samples indicate identical absorption edges for both the 1.54 μm and the visible emissions. No 1.54 μm luminescence can be observed by directly exciting the erbium triply ionized ions. This fact suggests that the erbium ions are excited by energy transfer process from the excited carriers in the hosts. From this result, we can propose that erbium could behave as a good probe to determine the absorption edge or the bandgap of the host material even it is not luminescent.Keywords
This publication has 7 references indexed in Scilit:
- Direct observation of oxygen-induced luminescent states in porous silicon by tunable excitation time-resolved spectroscopyApplied Physics Letters, 1996
- Electrochemical Er doping of porous silicon and its room-temperature luminescence at ∼1.54 μmApplied Physics Letters, 1994
- Optical activation and excitation mechanisms of Er implanted in SiPhysical Review B, 1993
- Thermal quenching mechanism of Yb intra-4f-shell luminescence in InPJournal of Applied Physics, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materialsElectronics Letters, 1989