Thermal quenching mechanism of Yb intra-4f-shell luminescence in InP

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Abstract
Thermal quenching mechanism of Yb intra‐4f‐shell luminescence were clarified by studying the temperature dependences of electrical and optical properties of Yb‐doped InP samples. The quenching mechanism which depends on shallow donor concentration was found by comparing temperature dependences of Yb 4f‐shell luminescence and free‐carrier concentration. This mechanism is a localized Auger effect and is efficient below about 70 K in samples having a larger donor concentration than Yb concentration. At higher temperatures, another quenching mechanism was found to be efficient which does not depend on donor concentration. This quenching of Yb intra‐4f‐shell luminescence is accompanied by some increase of band‐edge related luminescence. This phenomenon is explained by the energy back‐transfer mechanism from the excited Yb 4f‐shell to the InP host. Although an importance of the free‐carrier Auger effect has been suggested in conducting materials, we propose that above two mechanisms dominate the quenching of the Yb 4f‐shell luminescence in InP.