Photoemission from surface centers
- 15 April 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (8) , 366-369
- https://doi.org/10.1063/1.1655219
Abstract
A technique is described whereby photoemission from surface centers can be effectively isolated and carefully monitored. Electronic photoexcitation from interface states in the Si–SiO2 system has been observed using the technique and a photocapture cross‐sectional area ∼ 1 × 10−19 cm2 has been measured for states positioned energetically in the upper central portion of the silicon band gap.Keywords
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