Spatial dose uniformity monitor for electrically scanned ion beam
- 1 September 1978
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 49 (9) , 1300-1304
- https://doi.org/10.1063/1.1135572
Abstract
A technique is described for direct and precise monitoring of the spatial dose uniformity of an electrically scanned ion beam. The method employs a two-dimensional 10x10 array of Faraday cups, individually connected to a current integrator, to measure local dose distribution. It also employs a microprocessor for rapid data processing and topographic data display. The technique is applicable to high quality ion implantation processes as a uniformity monitor with an accuracy of 1%. In addition, a new concept for uniform ion beam scanning is proposed.Keywords
This publication has 6 references indexed in Scilit:
- Four-point sheet resistance correction factors for thin rectangular samplesSolid-State Electronics, 1977
- A fully automated technique for the rapid assessment of uniformity of doped layers by the four point probe methodRevue de Physique Appliquée, 1977
- A technique for measuring, displaying, recording, and modifying the spatial uniformity of implanted ionsJournal of Applied Physics, 1976
- Ion beam profile monitorReview of Scientific Instruments, 1975
- The evaluation of the Harwell-Lintott industrial ion implantation machine by making silicon planar resistorsJournal of Physics E: Scientific Instruments, 1972
- A New Approach to Direct Current IntegrationIEEE Transactions on Nuclear Science, 1967