The role of hydrogen in luminescence of electrochemically oxidized porous Si layer
- 31 December 1993
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 57 (1-6) , 121-124
- https://doi.org/10.1016/0022-2313(93)90118-7
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Photoinduced hydrogen loss from porous siliconApplied Physics Letters, 1992
- Effect of thermal annealing and surface coverage on porous silicon photoluminescenceApplied Physics Letters, 1992
- Comparing Effects of Vacuum Annealing and Dry Oxidationon the Photoluminescence of Porous SiJapanese Journal of Applied Physics, 1992
- Photoluminescence of porous Si, oxidized then deoxidized chemicallyApplied Physics Letters, 1992
- Microluminescence depth profiles and annealing effects in porous siliconApplied Physics Letters, 1992
- Luminescence degradation in porous siliconApplied Physics Letters, 1992
- Intense photoluminescence from laterally anodized porous SiApplied Physics Letters, 1991
- Thermal treatment studies of the photoluminescence intensity of porous siliconApplied Physics Letters, 1991
- Atmospheric impregnation of porous silicon at room temperatureJournal of Applied Physics, 1991
- Low temperature oxidation of crystalline porous siliconApplied Surface Science, 1990