Out-diffusion of Zn from Si: A method to study vacancy properties in Si
- 15 June 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (12) , 8062-8064
- https://doi.org/10.1063/1.367900
Abstract
We report out-diffusion experiments of Zn from homogeneously Zn-doped Si samples which were performed at 1107 °C. Depth distributions of Zn recorded by spreading-resistance profiling are accurately described on the basis of simultaneous contributions of the kick-out and dissociative diffusion mechanism. Analysis of the profiles reveals that Zn out-diffusion is mainly mediated by the dissociative mechanism. Fitting of Zn profiles yields data for the transport capacity of vacancies CVeqDV in Si and their thermal equilibrium concentration CVeq.This publication has 11 references indexed in Scilit:
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