The Diffusivity of Self-Interstitials in Silicon
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Values of the diffusivity of silicon self-interstitials have been previously inferred from analyses of the in-diffusion of Au in undislocated Si, e.g., 2×10-7 cm2 s-1 at 1100 °C. A more complete analysis by numerical integration of the effective diffusion equation with fewer assumptions yields ahigher minimum value, 6×10-6 cm2s-1 at 1100 °C. Recently published experiments showing no measurable difference in the oxidation-reduced diffusion of Sb in Si at 10 and 40 microns are consistent with this high value.Keywords
This publication has 11 references indexed in Scilit:
- Measurement of silicon interstitial diffusivityApplied Physics Letters, 1985
- Point defects, diffusion processes, and swirl defect formation in siliconApplied Physics A, 1985
- Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurementsApplied Physics A, 1984
- Kinetics of self-interstitials generated at the Si/SiO2 interfaceApplied Physics Letters, 1983
- On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in siliconApplied Physics A, 1983
- Self-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in siliconApplied Physics Letters, 1983
- Effect of Back‐Side Oxidation on B and P Diffusion in Si Directly Masked with Si3 N 4 FilmsJournal of the Electrochemical Society, 1982
- Effects of Oxidation on Aluminum Diffusion in SiliconJapanese Journal of Applied Physics, 1982
- Diffusion of gold in silicon: A new modelApplied Physics Letters, 1981
- On the theory of the diffusion of gold into siliconPhysica Status Solidi (a), 1980