Self-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in silicon
- 15 April 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (8) , 690-692
- https://doi.org/10.1063/1.94074
Abstract
We present an analysis of gold diffusion profiles in silicon taking into account that both self-interstitials and vacancies are present at thermal equilibrium. We find that at 1000 °C the contribution of self-interstitials to silicon self-diffusion is about equal to that of vacancies.Keywords
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